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4 inch GaN Epi On Si (AlN Nucleation) Wafer Producers
4 inch GaN Epi On Si (AlN Nucleation) Wafer Producers and Suppliers
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T,Western Union
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
China
- Verified Certificate
-
10
| Product name | 4 inch GaN Epi On Si (AlN Nucleation) Wafer Producers | Certification | - |
|---|---|---|---|
| Category | Semiconductors | Material | - |
| Keyword | gan on sic epi wafer manufacturer , gan epi on si epi wafer supplier | Unit Size | - |
| Brand name | - | Unit Weigh | - |
| origin | China | Stock | 25 |
| Supply type | Available | HS code | - |
Product Information
HMT as one of global leader in GaN power semiconductors, has achieved mass production of 4-inch/ 6-inch and 8-inch GaN-on-Si epi wafers with uniform, crack-free, low-defect-density epitaxial layers. we have proprietary buffer technology optimizes both high-voltage (HV) and low-voltage (LV) devices, enabling high yield and long-term reliability in power electronics applications such as fast charging, data centers, and automotive systems.
Key Features:
High uniformity, low dislocation density, and excellent wafer yield (>95%).
Supports 650V/700V power devices for industrial and consumer applications.
Monthly production capacity making it commercially scalable
HMT as one of global leader in GaN power semiconductors, has achieved mass production of 4-inch/ 6-inch and 8-inch GaN-on-Si epi wafers with uniform, crack-free, low-defect-density epitaxial layers. we have proprietary buffer technology optimizes both high-voltage (HV) and low-voltage (LV) devices, enabling high yield and long-term reliability in power electronics applications such as fast charging, data centers, and automotive systems.
Key Features:
High uniformity, low dislocation density, and excellent wafer yield (>95%).
Supports 650V/700V power devices for industrial and consumer applications.
Monthly production capacity making it commercially scalable
B2B Trade
| Price (FOB) | Negotiable | transportation | Express |
|---|---|---|---|
| MOQ | Negotiable | Leadtime | Negotiable |
| Payment Options | T/T,Western Union | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
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