D-Mode SiN Cap GaN On SiC Epi Wafer Manufacturers
D-Mode SiN Cap GaN On SiC Epi Wafer Manufacturers GaN Cap
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- China
- Payment Terms
- T/T
- Production method
- Available
- Shipping / Lead Time
- Negotiable / Negotiable
- Category
- Semiconductors
Suzhou Hengmairui Materials Technology Co.,Ltd.
China
- Verified Certificate
-
10
| Product name | D-Mode SiN Cap GaN On SiC Epi Wafer Manufacturers | Certification | - |
|---|---|---|---|
| Category | Semiconductors | Material | - |
| Keyword | gan on sic epi wafer manufacturers , 4 inch gan on sic epi wafer suppliers | Unit Size | - |
| Brand name | - | Unit Weigh | - |
| origin | China | Stock | 25 |
| Supply type | Available | HS code | - |
Product Information
As one of global GaN on SiC Epi Wafer Suppliers, HMT usually offer 4'' 6'' and 8'' AlGaN/GaN on SiC Epi Wafer with SiN cap, GaN cap or pGaN Cap. We have both D-Mode and E-Mode and RF structure for GaN on SiC.
GaN-on-SiC epi wafers combine the high electron mobility of GaN with the superior thermal conductivity of SiC, making them ideal for:
High-power RF applications (e.g., radar, 5G base stations)
Power electronics (e.g., EV inverters, fast chargers).
Aerospace & defense systems (e.g., phased-array radars, satellite comms)
Key Advantages:
✔ Higher power density (vs. GaN-on-Si or LDMOS).
✔ Better thermal management (SiC’s thermal conductivity ≈ 3x Si).
✔ Wider bandgap (3.4 eV for GaN, 3.3 eV for SiC), enabling high-voltage operation.
As one of global GaN on SiC Epi Wafer Suppliers, HMT usually offer 4'' 6'' and 8'' AlGaN/GaN on SiC Epi Wafer with SiN cap, GaN cap or pGaN Cap. We have both D-Mode and E-Mode and RF structure for GaN on SiC.
GaN-on-SiC epi wafers combine the high electron mobility of GaN with the superior thermal conductivity of SiC, making them ideal for:
High-power RF applications (e.g., radar, 5G base stations)
Power electronics (e.g., EV inverters, fast chargers).
Aerospace & defense systems (e.g., phased-array radars, satellite comms)
Key Advantages:
✔ Higher power density (vs. GaN-on-Si or LDMOS).
✔ Better thermal management (SiC’s thermal conductivity ≈ 3x Si).
✔ Wider bandgap (3.4 eV for GaN, 3.3 eV for SiC), enabling high-voltage operation.
B2B Trade
| Price (FOB) | Negotiable | transportation | Express |
|---|---|---|---|
| MOQ | Negotiable | Leadtime | Negotiable |
| Payment Options | T/T | Shipping time | Negotiable |
- President
- Cory
- Address
- LiSheng Industrial Building,60 Suli Road
- Product Category
- Semiconductors
- Year Established
- 2009
- No. of Total Employees
- 51-100
- Company introduction
-
Homray Material Technology(HMT)was established in 2009, is a leading manufacturer and supplier of Gallium Nitride(GaN) Substrate Wafer(GaN-On-Sapphire Template, Free-standing GaN Wafer), GaN Epi Wafer (GaN-On-Si Epi Wafer, GaN-On-Sapphire Epi Wafer, GaN-On-SiC Epi Wafer), and Silicon Carbide(SiC) Substrate Wafer, SiC Epi Wafer, Silicon Test Wafer etc. It is widely acknowledged that compound Semiconductor (GaN, SiC) with its superior property like wide-bandgap, is expected to the most promising material choice for next generation device. GaN device/module and SiC device/module can achieve low losses and fast switching/oscillation simultaneously because of its high critical electrical field. Homray Material Technology is committed to developing high quality GaN Wafer and SiC Wafer for HEMT RF, power electronics and opto-electronics applications. As the leading Substrate Wafer and Epi Wafer manufacturer and supplier in the semiconductor industry, our dealers and partners are mainly distributed in Europe, USA, Southeast Asia, and South America, our sales value exceeded 65 Million US dollars in 2020. Excellent products quality and professional service won the trust and support from our customers in the world as well as our share of market.
- Main Product
Related Products
Fan Filter Unit /FFU
Semiconductor Wafers
Silicone Rubber Products
DDR RAM, SSD, Flash, Memory Card
EMI Shielding Metal Spring Gasket
