Foundry Service
Negotiable Min Order Quantity Unit
- Required Quantity
-
- Place of Origin
- Payment Terms
- Negotiable
- Production method
- Negotiable
- Shipping / Lead Time
- Negotiable / Negotiable
- Keyword
- Category
- Other Computer Accessories
Apply a video call to the Supplier
H&S HighTech Corp.
- Country / Year Established
-
South Korea
/
1998
- Business type
- Manufacturer
- Verified Certificate
-
16
| Product name | Foundry Service | Certification | - |
|---|---|---|---|
| Category | Other Computer Accessories | Ingredients | - |
| Keyword | - | Unit Size | - |
| Brand name | - | Unit Weigh | - |
| origin | Stock | - | |
| Supply type | - | HS code | - |
Product Information
Descriptions
Telephus' TIPD is an advanced passive process using thick Cu metal. This foundry process is targeted to high performance, low cost and small size of passive only circuits like filters or diplexers. Thick Cu (10 m) metallization layer and insulated surface of Si (25 m SiO2 layer on top) make it possible to obtain high RF performance for wireless communication systems and integrated RF modules. Low dielectric constant material is adapted to reduce parasitic capacitance between metal layers. Precision NiCr resistors and SiN MIM capacitors are also available. Electro-Plated Ni/Au pad is used for wire bond interconnection or Cu pad for solder ball bumping. Packaged or die-form chips are provided on customers' request. The TIPD process uses 6" (150mm diameter) wafers for high volume production.
Features
- Thin Film Process on insulated Silicon
- Thick 3 Layer Metal: 10 m Cu
- Fine Pitch Metallization: 10 m width
- High Q Inductor: Q > 30 @ 2GHz
- Low Cost: Cu metal and Si substrate
- Thin Film NiCr Resistor
- Low Dielectric Constant Material (BCB)
- SiN (1100Å) MIM Capacitor
- Ni/Au Pad for Wire Bond
- Solder Ball Bumping available on Cu Pad
- Surface Passivation using BCB
- Mass Production (6" wafer)
- High Power Applications
Applications
- Passive Only Circuits
- Filter
- Diplexer
- Balun
- Coupler
- Phase Shift Network
- Power Combiner
- Customized Passive Network
- High Performance Circuit requiring High-Q
- Matching Networks
- High Power Circuits
- Components for RF Multi-chip Module (MCM)
- General Use for RF and Microwave Application
TIPD Process Details
|
Element
|
Parameter
|
Value
|
Units
|
|
Substrate
|
SiO2 Layer (25µm)
|
Dielectric Constant = 2.5
|
-
|
|
Si Sub (650µm)
|
8~10
|
ohm-cm
|
|
|
Interconnects
|
Metal Thickness
|
Three: 1, 0.7, 10
|
µm
|
|
Minimum Space
|
Met1 & 2=2, Met3=5
|
µm
|
|
|
Trace Width
|
Met1 & 2=2, Met3=10
|
µm
|
|
|
BCB Dielectric
|
Nom Thickness
|
Die1=2, Met3=10
|
µm
|
|
Dielectric Contrant
|
2.65
|
-
|
|
|
MIM Capacitor
|
Density
|
550 @ 1100A
|
PF/mm2
|
|
Maximum value
|
100
|
pF
|
|
|
Breakdown Voltage
|
> 100 (100 x 100 µm)
|
V
|
|
|
Inductor
|
Width & Spacing
|
W=10, 30, 50, S=5, 10
|
µm
|
|
Q factor @ 2GHz
|
> 30
|
-
|
|
|
Maximum Value
|
37
|
nH
|
|
|
Resistors
|
NiCr
|
20
|
ohm/sq
|
|
Back End
|
No Substrate Vias, No back side metallization
|
||
|
Substrate Thickness
|
Typical (Solder Ball)
|
650
|
µm
|
|
For Wire bonding
|
12 (recommended)
|
mil
|
|
Others
- Preliminary Design Manual Available
- Device Library for Thin Film Resistors, Capacitors and Inductors (ADS Compatible)
- Agilent ADS Simulation or 3D EM Simulation Support
- Reliability Reports available as Request
- Tiling of GDSII Stream Files including PCM
- Supports for Packaging Development and RF Test Development (on wafers and packaging)
- Qualification Services
- Failure Analysis
B2B Trade
| Price (FOB) | Negotiable | transportation | - |
|---|---|---|---|
| MOQ | Negotiable | Leadtime | Negotiable |
| Payment Options | Negotiable | Shipping time | Negotiable |
- President
- Ilkwon Dong
- Address
- 25-11, Jang-dong, Yuseong-gu, Daejeon, 305-343, Korea
- Product Category
- Other Telecommunications Equipment
- Year Established
- 1998
- No. of Total Employees
- 1-50
- Company introduction
-
Telephus Inc. is a venture corporation that develops, manufactures, and markets wireless telecommunication components with its own design capability and innovative smart substrate technology. The value of Telephus products is its breakthrough, patented manufacturing technology for smart silicon substrates, which creates demonstrable customer benefits in term of cost, function, and product reliability.
For instance, with a new concept of RF IC design (called "TR-Array") spun off from smart substrate technology, Telephus has received an award from ECTC, US, 2000 (sponsored by Motorola). Smart Substrate Technology provides outstanding cost benefit by integrating numerous passive components of GaAs (or SiGe) RF IC into a silicon substrate without any sacrifice of electrical property.
In addition, for diversified product lines in the semiconductor component industry, Telephus has developed an innovative ACF (Antistrophic Conductive Film: Advanced Electronic Package Material) showing significant improvement of T/C (Thermal Cycle) reliability of flip chip on organic substrates with lower CTE and higher modulus of NCF layer.
- Main Markets
-
China
Hong Kong(China)
Japan
Malaysia
Philippines
- Main Product
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